HY27US08561M Datasheet, Hynix Semiconductor

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HY27US08561M Features and benefits

SUMMARY HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or .

HY27US08561M Application

FAST BLOCK ERASE - Block erase time: 2ms (Typ) NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data www.D.

HY27US08561M Description

of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled(Enabled) (Page23) 1) change FBGA dimension : Thickness : 1.2mm(max) -> 1.0mm(max) 2) Edit Fig.33 read operation with CE don't care 1) Change TSOP1,WSOP1,FBGA pack.

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